stgp3nb60hd STGP3NB60HDFP n-channel 3a - 600v to-220/fp powermesh ? igbt n high input impedance (voltage driven) n low on-voltage drop (v cesat ) n low gate charge n high current capability n very high frequency operation n off losses include tail current n co-packaged with turboswitch ? antiparallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding perfomances. the suffix "h" identifies a family optimized to achieve very low switching times for high frequency applications (<120khz). applications n high frequency motor controls n smps and pfc in both hard switch and resonant topologies ? internal schematic diagram type v ces v ce(sat) i c stgp3nb60hd STGP3NB60HDFP 600 v 600 v < 2.8 v < 2.8 v 3 a 3 a june 1999 1 2 3 to-220 to-220fp 1 2 3 absolute maximum ratings symbol parameter value unit stgp7nb60hd stgp7nb60hdfp v ces collector-emitter voltage (vgs = 0) 600 600 v v ge gate-emitter voltage 20 20 v i c collector current (continuous) at tc = 25 o c6 6a i c collector current (continuous) at tc = 100 o c3 3 a i cm ( ) collector current (pulsed) 24 24 a p tot total dissipation at tc = 25 o c7035w derating factor 0.56 0.28 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by max. junction temperature 1/9
thermal data to-220 to-220fp r thj-case thermal resistance junction-case max 1.78 3.57 o c/w r thj-amb r thc-sink thermal resistance junction-ambient max thermal resistance case-sink typ 62.5 0.5 o c/w o c/w electrical characteristics (t j = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 m a v ge = 0 600 v i ces collector cut-off (v ge = 0) v ce = max rating t j = 25 o c v ce = max rating t j = 125 o c 100 1000 m a m a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v v ce = 0 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge i c = 250 m a35v v ce(sat) collector-emitter saturation voltage v ge = 15 v i c = 3 a v ge = 15 v i c = 3 a t j = 125 o c 2.4 1.9 2.8 v v dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25 v i c = 3 a 1.3 2.4 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v f = 1 mhz v ge = 0 160 23 4.5 235 33 6.6 300 43 8.6 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v i c = 3 a v ge = 15 v 21 6 7.6 27 nc nc nc i cl latching current v clamp = 480 v r g =10 w t j = 150 o c 12 a switching on symbol parameter test conditions min. typ. max. unit t d(on) t r delay time rise time v cc = 480 v i c = 3 a v ge = 15 v r g = 10 w 16 30 ns ns (di/dt) on e on ( m ) turn-on current slope turn-on switching losses v cc = 480 v i c = 3 a r g = 10 w v ge = 15 v t j = 125 o c 400 77 a/ m s m j stgp3nb60hd/fp 2/9
electrical characteristics (continued) switching off symbol parameter test conditions min. typ. max. unit t c t r (v off ) t d ( off ) t f e off (**) e ts ( m ) cross-over time off voltage rise time delay time fall time turn-off switching loss total switching loss v cc = 480 v i c = 3 a r ge = 10 w v ge = 15 v 90 36 53 70 33 100 ns ns ns ns m j m j t c t r (v off ) t d ( off ) t f e off (**) e ts ( m ) cross-over time off voltage rise time delay time fall time turn-off switching loss total switching loss v cc = 480 v i c = 3 a r ge = 10 w v ge = 15 v t j = 125 o c 180 82 58 110 88 165 ns ns ns ns m j m j collector-emitter diode symbol parameter test conditions min. typ. max. unit i f i fm forward current forward current pulsed 3 24 a a v f forward on-voltage i f = 3 a i f = 3 a t j = 125 o c 1.6 1.4 2.0 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 3 a v r =200 v di/dt = 100 a/ m s t j = 125 o c 87 160 3.7 ns nc a ( ) pulse width limited by max. junction temperature ( m ) include recovery lossess on the stta306 freewheeling diode ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % (**)losses include also the tail (jedec standardization) thermal impedeance for to-220 thermal impedeance for to-220fp stgp3nb60hd/fp 3/9
output characteristics transconductance collector-emitter on voltage vs collector current transfer characteristics collector-emitter on voltage vs temperature gate threshold vs temperature stgp3nb60hd/fp 4/9
normalized breakdown voltage vs temperature gate charge vs gate-emitter voltage total switching losses vs temperature capacitance variations total switching losses vs gate resistance total switching losses vs collector current stgp3nb60hd/fp 5/9
switching off safe operating area diode forward voltage fig. 1: gate charge test circuit fig. 3: switching waveforms fig. 2: test circuit for inductive load switching stgp3nb60hd/fp 6/9
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c stgp3nb60hd/fp 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data stgp3nb60hd/fp 8/9
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . stgp3nb60hd/fp 9/9
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